Hvis nogle er interesserede i hvad jeg har fundet ud af so far:
It is definitely not the effective transistor length (which can be substantially smaller than the process). Historically (i.e., in 0.25 um and larger technologies) it did refer to the drawn channel length (which in those days was about the same as the effective channel length anyway). With deep submicron technologies, however, the DRAM half pitch definition is a better measure.
If you want the best answer, I'd ask someone in device processing, not in analog electronics. Actually, if you look at the 2007 edition of the ITRS:
http://www.itrs.net[...]
You'll see an explanation of this on page 17. They indicate that the DRAM half pitch is just one measure, but it's the one they use (and used to refer to it as "Technology Node", although they no longer do to avoid ambiguity).
Also refer to the table on page 76. Note that for a DRAM half pitch of 65 nm (aka the 65 nm technology node), the drawn channel length is 42 nm while the physical channel length is 25 nm. Clearly the technology node does not refer to the channel length.
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Så det kan konkluderes at det HISTORISK refererede til transistor channel length, men nu er definitionen på DRAM half pitch, som er en af mange definitioner indenfor proces teknologi. For at undgå forvirring kaldes det ikke "teknologi knudepunkter" mere.
Skriver mere når jeg finder ud af det :)
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